Spin electronics is one of the beyond CMOS technologies that are being actively developed in industry and universities these days. As the Moore’s law scaling comes to an end, people expect to utilize the electron’s spin degree of freedom and make devices which have lower power consumption and faster speed.  Different from conventional semiconductor electronics, many novel physics and new properties exist in these spin based devices. In our group, we focus on making new device structures and materials for spin-based memory, logic and communication applications. The topics that we are currently looking into include ultrafast spintronics with compensated magnet, spintronics based on 2D materials and low power spintronics with topological materials.


We are hiring at the undergraduate and graduate level.

Please contact luqiao@mit.edu if you are interested.